1. What do you mean by instrument potential barriers,How many types are there?

Answer- Instrument Potential barrier is the energy inserted in order to go against the passage of electron.

Electric transport in sputtered LiNbO3 (LN) films sandwiched between TiN and Si electrodes revealed Schottky emission at low electric field and Poole-Frenkel conduction at higher electric field without any hysteresis. The Poole-Frenkel conduction region was brought into the reproducible potential barrier-controlled conduction region by inserting a thin SiO2 layer between LN and TiN, where current hysteresis appeared. Trapping of electrons at SiO2/LN interface states when TiN is negatively biased produces the highest potential barrier, resulting in a high resistance state, whereas releasing the trapped electrons at positive bias leads to a low resistant state. When electric contact to the TiN electrode was taken using Ag paste, another current hysteresis resulting from the connection and disconnection of Ag filaments was observed after time-dependent soft dielectric breakdown.